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In this paper, a nonlinear modeling approach for gallium nitride high‐electron mobility transistor (GaN HEMT) on Si substrate is proposed. A reliable method has been developed to extract the extrinsic elements of the model. Its main advantage is its accuracy and dependency on only pinched‐off and unbiased S‐parameter measurements. The extrinsic elements are de‐embedded from multi‐bias S‐parameters...
This Special Issue reviews the state‐of‐the‐art and new trends in modeling of Gallium Nitride transistors. Aspects of transistor characterization, simulation, and design all receive significant attention, highlighting the potential of this disruptive technology in the development of future communication systems.
A design method for microwave GaN high‐electron mobility transistor (HEMT) power amplifier based on equivalent circuit parameters multi‐bias statistical models is presented. The statistical modeling method includes principal component analysis, factor analysis, and multiple regressions modeling techniques. The statistical model is validated by comparing original and Monte Carlo‐simulated means, standard...
In this paper, a physics‐based analytical model for threshold voltage, two‐dimensional electron gas (2DEG) sheet charge density and DC characteristics of the proposed spacer layer‐based AlxIn1−xN/AlN/GaN metal‐oxide‐semiconductor high electron mobility transistor is presented by considering the quasi‐triangular quantum well. 2DEG sheet charge density (ns) is obtained by the variation of Fermi level...
As wireless cellular communication keeps expanding toward higher bandwidth, multiband signals, and high frequencies of operation, the design of power efficient radio frequency power amplifiers (PAs) for cellular phone basestations is submitted to more stringent requirements. This paper discusses the promising technique of nonlinear embedding, which may help stream line the design of such PAs. To this...
In this paper, we describe an extraction procedure of nonlinear models for microwave field‐effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S‐parameter measurements. Next, we refine the parameters by optimization...
Gallium nitride high electron mobility transistors (GaN HEMTs) have been accused of suffering from soft‐compression, a recognized form of nonlinearity. Recently published works showed that this phenomenon – explained with the devices' charge‐trapping effects – is only observed under CW operation, which has little in common with generally used communication signals. In real operation, those effects...
An optimization‐based method allowing a straightforward extraction of scalable small‐signal equivalent‐circuit models for high‐frequency active devices is proposed. The approach only requires a set of devices with a fixed number of fingers and scaling unit gate widths: no dummy structures or bias conditions potentially harmful for the devices are needed. The extraction method is then demonstrated...
This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistors small‐signal equivalent circuit model. The algorithm combines parameter scanning and iteration methods to solve the problem of error accumulation in conventional methods and is implemented in matlab programming. By using the iteration method, the algorithm each time uses more accurate element...
An ad hoc setup for complete on‐chip large‐signal characterization of both series and parallel high‐power GaN high‐electron‐mobility transistor switches has been developed. Thanks to its characteristics, arbitrary loads at both switch terminals (i.e., drain and source) for power levels up to tens of watts can be applied. The setup is suitable for extraction and validation of equivalent circuit and...
This paper presents an analytical parameter extraction method for empirical large‐signal model of GaN high electron mobility transistors (HEMTs) including self‐heating and trapping effects. Every parameter in the model is extracted in an analytic way. An improved Angelov I–V model specific for GaN HEMTs with 53 parameters is employed. The I–V model parameters are divided into blocks according to their...
The wave approach has appeared as a very efficient tool for modeling as well as for measurements of noise parameters of microwave transistors. Having in mind the attractiveness of transistors in gallium nitride technology in modern communication systems, where it is very important to keep the noise on a low level and, thus, to have accurate transistor noise models, in this paper, the wave approach...
The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent‐circuit models for GaN HEMTs, which are the preferred devices for high‐power high‐frequency applications. This overview is meant to provide a practical modeling know‐how for this advanced type of transistor, in order to support its development for improving device technology and...
An improved linear modeling technique for gallium nitride high electron mobility transistor small‐signal equivalent circuit under different bias conditions is presented in this paper. The method is a combination of the test structure and sensitivity analytical method to improve the precision of the intrinsic elements in the small‐signal model. The analytical expressions for the relative sensitivities...
Current characteristic has not been detailed, analyzed, and modeled in conventional High‐electron‐mobility transistor field‐effect transistor model, which is not accuracy enough because the current has different variation rules under different gate voltages. A novel approach for the modeling of high‐electron‐mobility transistor high power amplifier is proposed in this paper. In order to obtain a more...
A novel GaN high‐electron mobility transistor (HEMT) nonlinear large‐signal statistical model based on empirical equivalent circuit is proposed in this paper. Thirty‐four GaN HEMTs from 10 batches are measured, and all the parameters of the large‐signal model are extracted by in‐house parameter extraction program. We choose six most sensitive parameters of the drain‐source current model and the gate...
In this paper, empirical mode decomposition is applied to decompose the non‐stationary power signals that results in a set of maximum and minimum points while satisfying the properties of the sifting process. Further, the empirical mode decomposition method is implemented to extract various intrinsic mode functions from the non‐stationary signal disturbance waveforms that are already superimposed...
We propose a compressed non‐local surface‐impedance‐type boundary condition for the efficient numerical modeling of large geometrically persistent parts in multi‐scale electromagnetic simulations. The underlying compressed model is an approximate Schur complement of finite element Galerkin matrix. Our approach relies on local low‐rank representation in the framework of the
‐matrix storage format...
A simple small‐signal equivalent circuit based on the physical structure of silicon‐on‐insulator metal–oxide–semiconductor field‐effect transistor varactor for substrate loss effects is presented in this paper. The model includes a BSIMSOI charge formulation and physical geometry and process parameter based on parasitic modeling. Key device performances of capacitance and quality factor are validated...
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